APTML202UM18R010T3AG APTML202UM18R010T3AG ? rev 0 november, 2009 www.microsemi.com 1 ? 3 16 15 18 20 23 22 13 11 12 14 8 7 29 30 28 27 26 3 32 31 10 19 2 25 4 pins 13/14 ; 29/30 ; 31/32 must be shorted together absolute maximum ratings (per leg) * output current per leg must be limited to 44a @ t c =25c and 31a @ t c =80c to not exceed the shunt specification. n in saturation mode these devices are sensitive to electrosta tic discharge. proper handling procedures should be followed. see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v dss drain - source breakdown voltage 200 v t c = 25c 109* i d continuous drain current t c = 80c 81* i dm pulsed drain current 400 a v gs gate - source voltage 30 v r dson drain - source on resistance 19 m p d maximum power dissipation n t c = 25c 480 w i ar avalanche current (repetitive and non repetitive) 100 a e ar repetitive avalanche energy 50 e as single pulse avalanche energy 3000 mj application ? electronic load dedicated to power supplies and battery discharge testing features ? linear mosfet ? very low stray inductance ? internal thermistor fo r temperature monitoring ? high level of integration ? aln substrate for improved thermal performance benefits ? direct mounting to heatsink (isolated package) ? easy series and parallels combinations for power and voltage improvements ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? rohs compliant linear mosfet power module v dss = 200v r dson = 18m typ @ tj = 25c i d = 109a* @ tc = 25c
APTML202UM18R010T3AG APTML202UM18R010T3AG ? rev 0 november, 2009 www.microsemi.com 2 ? 3 all ratings @ t j = 25c unless otherwise specified electrical characteristics (per leg) symbol characteristic test conditions min typ max unit v ds = 200v ; v gs = 0v t j = 25c 25 i dss zero gate voltage drain current v ds = 160v ; v gs = 0v t j = 125c 250 a r ds(on) drain ? source on resistance v gs = 10v, i d = 50a 18 19 m v gs(th) gate threshold voltage v gs = v ds , i d = 2.5ma 2 4 v i gss gate ? source leakage current v gs = 30 v 100 na dynamic characteristics (per leg) symbol characteristic test conditions min typ max unit c iss input capacitance 9880 c oss output capacitance 2320 c rss reverse transfer capacitance v gs = 0v v ds = 25v f = 1mhz 700 pf shunt electrical characteristics (per leg) symbol characteristic min typ max unit r sh resistance value 10 m t sh tolerance 2 % t c =25c 20 p sh load capacity t c =80c 10 w t c =25c 44 i sh current capacity t c =80c 31 a temperature sensor ptc symbol characteristic min typ max unit r 25 resistance @ 25c 1980 2020 r 100 /r 25 resistance ratio tamb=100c & 25c 1.676 1.696 1.716 r -55 /r 25 resistance ratio tamb=-55c & 25c 0.48 0.49 0.50 b temperature coefficient 7900 ppm/k thermal and package characteristics symbol characteristic min typ max unit r thjc junction to case thermal resistance mosfet (per leg) 0.26 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 4000 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2.5 4.7 n.m wt package weight 110 g
APTML202UM18R010T3AG APTML202UM18R010T3AG ? rev 0 november, 2009 www.microsemi.com 3 ? 3 sp3 package outline (dimensions in mm) 17 12 28 1 see application note 1901 - mounting instructions for sp3 power modules on www.microsemi.com typical performance curve (linear mode) (per leg) drain current vs drain source voltage 1 10 100 0 50 100 150 200 drain source voltage (v) drain current (a) t j =125c power vs drain source voltage 200 250 300 350 400 0 50 100 150 200 drain source voltage (v) dissipated power (w) t j =125c microsemi reserves the right to change, without notice , the specifications and information contained herein microsemi's products are covered by one or more of u.s patents 4, 895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,8 86 6,939,743 7,342,262 and foreign patents. u.s and foreign patents pending. all rights reserved.
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